Researchers from Arizona State University and Georgia Institute of Technology published “Thermal- and Aging-Aware Rowhammer Vulnerability Analysis of Monolithically-Integrated IWO eDRAM for Edge Platforms”. “This work presents the first comprehensive temperature- and aging-aware vulnerability analysis of amorphous Indium Tungsten Oxide (IWO) embedded DRAM (eDRAM), a promising next-generation memory for monolithic 3D (M3D) integration,” per the... » read more The post Analyzing Rowhammer Vulnerability in Monolithic 3D IWO eDRAM for Edge (ASU, Georgia Tech) appeared first on Semiconductor Engine
Source: Semiconductor Engineering — read the full report at the original publisher.