Researchers from University at Buffalo-SUNY, The Ohio State University, and Lawrence Livermore National Laboratory published a technical paper titled “Coordination-Sensitive Nanoscale Analysis of Defect-Driven Phase Transformation in Si-Doped (AlxGa1−x)2O3.” Abstract excerpt: “Defect-driven phase instability critically influences the structural reliability of ultrawide bandgap oxides, yet direct nanoscale metrics linking local chemistry to structural transformation remain limited.... » read more The post Atom Probe Framework Tracks Phase Instability In Si-Doped Gallium Oxide (SUNY, Ohio State,

Source: Semiconductor Engineering — read the full report at the original publisher.

This is a curated wire item. The Continuum Brief does not republish full third-party articles; this entry links to the original source.