Researchers from NIST, University of Maryland, and Johns Hopkins University published a technical paper titled “Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces.” Abstract excerpt “Accurate prediction of Schottky barrier heights (SBHs) at metal–semiconductor interfaces is essential for understanding and optimizing charge injection in electronic and optoelectronic devices. However, first-principles calculations of SBHs... » read more The post Computational Strategies for Schottky Barrier Heights Prediction (NIST, U. Maryland, Johns Hopkins) appeared first o
Source: Semiconductor Engineering — read the full report at the original publisher.