Nature, Published online: 01 July 2026; doi:10.1038/s41586-026-10707-0 Cross-sectional scanning tunnelling microscopy shows a 2 nm carrier transfer length in bismuth-contacted monolayer MoS2 transistors, defining metal-contact scaling limits for sub-10 nm 2D electronic devices.
Nature, Published online: 01 July 2026; doi:10.1038/s41586-026-10707-0 Cross-sectional scanning tunnelling microscopy shows a 2 nm carrier transfer length in bismuth-contacted monolayer MoS2 transistors, defining metal-contact scaling limits for sub-10 nm 2D electronic devices.
Source: Nature — Latest Research — read the full report at the original publisher.
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