A new technical paper, “Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory,” was published by researchers from University of Seoul and Samsung Electronics. “This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and... » read more The post Impact of Band-to-Band Tunneling in the CTL of V-NAND Flash Memory (U. of Seoul, Samsung) appeared first on Semiconductor Engineering .

Source: Semiconductor Engineering — read the full report at the original publisher.

This is a curated wire item. The Continuum Brief does not republish full third-party articles; this entry links to the original source.