Reduce shallow trench isolation and recess nonuniformity introduced by pattern-dependent etch. The post Process Variation In The Era Of Scaling: Improving Uniformity With Dummy Fill appeared first on Semiconductor Engineering .
Reduce shallow trench isolation and recess nonuniformity introduced by pattern-dependent etch. The post Process Variation In The Era Of Scaling: Improving Uniformity With Dummy Fill appeared first on Semiconductor Engineering .
Source: Semiconductor Engineering — read the full report at the original publisher.
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