Researchers from Stanford University, Chalmers University of Technology, HORIBA Scientific, and SLAC National Accelerator Laboratory have published “Scaling nanoribbon transistors with monolayer transition metal dichalcogenides”. Abstract “Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS) provide the ultimate thickness limit, yet good device performance has largely remained restricted to... » read more The post Scaling Nanoribbon Transistors with Monolayer TMDs (Stanford, Chalmers, Horiba, SLAC) appeared
Source: Semiconductor Engineering — read the full report at the original publisher.