Researchers from University of Texas at Austin and Harvard University published “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials”. Abstract Excerpt “Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel design of optoelectronic devices. However, traditional... » read more The post Surface Modification for III-V Selective Area MBE of Non-Selective Mask Materials (UT Austin, Harvard) appeared first on Semiconductor Engine
Source: Semiconductor Engineering — read the full report at the original publisher.