Impact of Band-to-Band Tunneling in the CTL of V-NAND Flash Memory (U. of Seoul, Samsung)
A new technical paper, “Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory,” was published by researchers from University of Seoul and Samsung Electronics. “This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and... » read more The post Impact of Band-to-Band Tunneling in the CTL of V-NAND Flash Memory (U. of Seoul, Samsung) appeared first on Semiconductor Engineering .
Ongoing advancements in NAND flash memory density necessitate continuous research into reliability and performance limitations under extreme operating conditions.
This research addresses fundamental physical limitations in V-NAND flash, which is critical for future scaling and reliability of solid-state storage, impacting data centers and consumer electronics.
Understanding BTBT in CTLs could lead to design modifications or operational protocol changes for V-NAND, potentially extending device lifespan or enabling higher densities.
- · NAND flash manufacturers
- · Data center operators
- · Memory-reliant industries
- · Competitors with less robust V-NAND technology
Improved V-NAND memory reliability and longevity through optimized design or erasure algorithms.
Reduced total cost of ownership for flash storage solutions due to increased endurance.
Acceleration of AI/ML applications requiring massive, reliable high-density storage within the compute supply chain.
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